PART |
Description |
Maker |
UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8 MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6 MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制 Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制 MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导 STMicroelectronics N.V.
|
IRL3803L IRL3803S |
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)\u003d 0.006ohm,身份证\u003d律目140A?) Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?) POWER MOSFET(VDSS=30V, RDS(ON)=0.006OHM, ID=140Aㄌ) Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A) Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=-30V Rds(on)=0.020ohm Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm SHROUD, PRIVACY; RoHS Compliant: Yes
|
IRF[International Rectifier]
|
IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A) Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A ) HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A ) 30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直|4A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A) Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
|
IRF[International Rectifier]
|
IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
IRF2807 IRF2807PBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Id=82A? Power MOSFET(Vdss=75V/ Id=82A)
|
International Rectifier
|
IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1 |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
|
IRF[International Rectifier]
|